GaN based microwave power HEMTs

被引：0

作者：

Mishra, UK ^{[1
]}

Wu, YF ^{[1
]}

Keller, BP ^{[1
]}

Keller, S ^{[1
]}

Denbaars, SP ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent progress of AlGaN/GaN based power HEMTs is presented. The mobility in these modulation doped structures is over 1200 cm(2)V(-1)s(-1) at 300 K with sheet densities of over 1x10(13) cm(-2). The current density is over 1 A/mm with gate-drain breakdown voltages up to 280 V. F-t of over 52 GHz have been demonstrated. CW power density greater than 3 W/mm at 18 GHz has been achieved.

引用

页码：878 / 883

页数：6

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