GaN based microwave power HEMTs

被引：0
|
作者：
Mishra, UK [1 ]
Wu, YF [1 ]
Keller, BP [1 ]
Keller, S [1 ]
Denbaars, SP [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recent progress of AlGaN/GaN based power HEMTs is presented. The mobility in these modulation doped structures is over 1200 cm(2)V(-1)s(-1) at 300 K with sheet densities of over 1x10(13) cm(-2). The current density is over 1 A/mm with gate-drain breakdown voltages up to 280 V. F-t of over 52 GHz have been demonstrated. CW power density greater than 3 W/mm at 18 GHz has been achieved.
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页码：878 / 883
页数：6
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