High Impedance Transforming Dual-Band Balun with Isolation and Output Ports Matching

被引：0
|
作者：
Gupta, Rahul [1 ]
Maktoomi, Mohammad H. [1 ]
Singh, Vikas V. [1 ]
Hashmi, Mohammad S. [1 ,2 ]
机构：
[1] IIIT Delhi, Dept Elect & Commun Engn, New Delhi 110020, India
[2] Nazarbayev Univ, Dept Elect & Comp Engn, Astana 010000, Kazakhstan
来源：
PROGRESS IN ELECTROMAGNETICS RESEARCH LETTERS | 2019年 / 81卷
关键词：
ANTENNA; FREQUENCY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dual-band balun with inherent impedance transformation is presented in this paper. The inherent impedance transformation ratio from a range of 0.4 to 4.0 makes the balun ideal for the on-chip fabrication. The proposed dual-band balun exhibits excellent input port matching, equal output signal with phase difference of 180 degrees, and extremely good isolation and matching at the output ports. A table is provided with the design parameters at the extreme impedance transformation ratios. The design concept of the proposed balun has been validated through a prototype fabricated on a Rogers RO5880 substrate. The measurement results are in good agreement with the EM simulation measurements.
引用
收藏
页码：121 / 126
页数：6
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