Preparation of 3 inch freestanding GaN substrates by hydride vapor phase epitaxy with void-assisted separation

被引：14

作者：

Yoshida, T. ^{[1
]}

Oshima, Y. ^{[1
]}

Eri, T. ^{[1
]}

Watanabe, K. ^{[1
]}

Shibata, M. ^{[1
]}

Mishima, T. ^{[1
]}

机构：

[1] Hitachi Cable Ltd, Adv Elect Mat Res Dept, Tsuchiura, Ibaraki 3000026, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 05期

关键词：

D O I：

10.1002/pssa.200778431

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By using the hydride vapor phase epitaxy and a void-assisted separation method, freestanding 3 inch GaN substrates were successfully fabricated for the first time, and the process showed an excellent reproducibility. A thick GaN layer 3.2 inches in diameter was easily separated from the base substrate. No cracks were generated during the separation process, and the separation process was no more difficult than that of 2 inch GaN substrates. The dislocation density was of the order of 10(6) cm(-2). The carrier density was approximately 1 x 10(18) cm(-3) and the mobility was 3.4 x 10(2) cm(2) V(-1) s(-1). The concentrations of impurities, estimated by secondary-ion mass spectrometry, were below the limit of detection, except for Si. The Si concentration was approximately 1 x 10(18) cm(-3) which is in good agreement with the carrier density.

引用

页码：1053 / 1055

页数：3

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