Self-separation of freestanding GaN from sapphire substrates by hydride vapor phase epitaxy

被引：0
|
作者：
Tomita, K. [1 ]
Kachi, T. [1 ]
Nagai, S. [2 ]
Kojima, A. [2 ]
Yamasaki, S. [2 ]
Koike, M. [2 ]
机构：
[1] Toyota Central R and D Lab., Inc., Nagakute, Aichi 480-1192, Japan
[2] Toyoda Gosei Corporation Limited, 710 Origuchi, Shimomiyake, Heiwa-cho, Nakashima-gun, Aichi 490-1312, Japan
来源：
Physica Status Solidi (A) Applied Research | 2002年 / 194卷 / 2 SPEC.期
关键词：
Freestanding wafers - Hydride vapor phase epitaxy - Self-separation;
D O I：
10.1002/1521-396X(200212)194:23.0.CO;2-B
中图分类号：
学科分类号：
摘要：
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页码：563 / 567
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