Role of the resistive layer on the performances of 2D a-Si:H thin film position sensitive detectors

被引：19
|
作者：
Martins, R [1 ]
Fortunato, E
机构：
[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-1200 Lisbon, Portugal
[2] Univ Nova Lisboa, CEMOP, P-2825 Monte De Caparica, Caparica, Portugal
来源：
THIN SOLID FILMS | 1999年 / 337卷 / 1-2期
关键词：
position sensors; devices; amorphous silicon; thin films;
D O I：
10.1016/S0040-6090(98)01196-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The aim of this work; is to present an analytical model which can to interpret the: role of the collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated p-i-n thin film position sensitive detectors. In addition. experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：158 / 162
页数：5
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