A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors

被引：0
|
作者：
Fiori, G. [1 ]
Lebegue, S. [2 ]
Betti, A. [1 ]
Michetti, P. [3 ]
Klintenberg, M. [4 ]
Eriksson, O. [4 ]
Iannaccone, G. [1 ]
机构：
[1] Univ Pisa, Dipartimento Ingn Informaz, Via Caruso 16, I-56122 Pisa, Italy
[2] Univ Nancy, Inst Jean Barriol, F-54506 Vandoeuvre Les Nancy, France
[3] Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany
[4] Uppsala Univ, Dept Phys & Astron, SE-75120 Uppsala, Sweden
来源：
2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年
基金：
瑞典研究理事会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Performance analysis of Field Effect Transistors based on hydrogenated graphene is performed through a multi-scale approach based on calculations of the energy bands by means of GW approximation, a three-nearest neighbor (3NN) sp 3 tight-binding Hamiltonian, and a ballistic transport model. The considered device exhibits large I-on and I-on / I-off ratios, due to the large bandgap, with reduced lithographic constrains as compared to one-dimensional channels.
引用
收藏
页码：299 / 302
页数：4
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