Anisotropy of optical phonons in semiconductor superlattices: Raman scattering experiments

被引：2

作者：

Tenne, DA ^{[1
]}

Gaisler, VA ^{[1
]}

Moshegov, NT ^{[1
]}

Toropov, AI ^{[1
]}

Shebanin, AP ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Joint Inst Geol Geophys & Mineral, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 1998年 / 68卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.567820

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experiments on Raman scattering in the "forward" geometry, permit ting observation of anisotropy of the optical phonons, are performed on specially prepared short-period GaAs/AlAs superlattice structures with the substrates removed and the surfaces covered with an antireflective layer. The experimental data agree well with the computational results obtained for the angular dispersion of optical phonons in superlattices on the basis of a modified continuum model. (C) 1998 American Institute of Physics.

引用

页码：53 / 58

页数：6

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