High-resolution X-ray diffraction study of CZ-grown GaAsP crystals

被引：1

作者：

Kowalski, G. ^{[1
]}

Gronkowski, J. ^{[1
]}

Czyzak, A. ^{[1
]}

Slupinski, T. ^{[1
]}

Borowski, J. ^{[1
]}

机构：

[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 08期

关键词：

D O I：

10.1002/pssa.200675660

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report results of X-ray investigations of tellurium-doped GaAs1-xPx (with 0.07 <= x <= 0.20) single crystals, conducted in order to support finding proper growth parameters which would yield a material of sufficient homogeneity of the lattice parameter for prospective applications. Our samples were studied using high-resolution diffractometry which allowed to obtain both rocking curves and reciprocal space maps of the diffracted intensity, as well as using plane-wave topography in the reflection mode. Weak reflections were also used to study the influence of Te atoms on the compound lattice. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2578 / 2584

页数：7

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