High-Performance Polycrystalline Silicon Thin-Film Transistors Based on Metal-Induced Crystallization in an Oxidizing Atmosphere

被引：11

作者：

Chen, Rongsheng ^{[1
]}

Zhou, Wei ^{[1
]}

Zhang, Meng ^{[1
]}

Wong, Man ^{[1
]}

Kwok, Hoi-Sing ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 05期

关键词：

Polycrystalline silicon; thin-film transistors (TFTs); metal-induced crystallization (MIC); oxygen annealing; PHASE; OXIDATION;

D O I：

10.1109/LED.2015.2409858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An oxidizing rather than the commonly used nonoxidizing atmosphere is used to carry out the thermal process required by the metal-induced crystallization (MIC) of amorphous silicon. Thin-film transistors fabricated on the resulting polycrystalline silicon (poly-Si) exhibit improved device characteristics. Since thermal oxidation is known to induce the injection of silicon interstitials, the improvement is attributed to a reduction in the defect population caused by the incorporation of the injected silicon interstitials in the grain boundaries of the MIC poly-Si.

引用

页码：460 / 462

页数：3

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