High-Performance Polycrystalline Silicon Thin-Film Transistors Based on Metal-Induced Crystallization in an Oxidizing Atmosphere

被引：11
|
作者：
Chen, Rongsheng [1 ]
Zhou, Wei [1 ]
Zhang, Meng [1 ]
Wong, Man [1 ]
Kwok, Hoi-Sing [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 05期
关键词：
Polycrystalline silicon; thin-film transistors (TFTs); metal-induced crystallization (MIC); oxygen annealing; PHASE; OXIDATION;
D O I：
10.1109/LED.2015.2409858
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An oxidizing rather than the commonly used nonoxidizing atmosphere is used to carry out the thermal process required by the metal-induced crystallization (MIC) of amorphous silicon. Thin-film transistors fabricated on the resulting polycrystalline silicon (poly-Si) exhibit improved device characteristics. Since thermal oxidation is known to induce the injection of silicon interstitials, the improvement is attributed to a reduction in the defect population caused by the incorporation of the injected silicon interstitials in the grain boundaries of the MIC poly-Si.
引用
收藏
页码：460 / 462
页数：3
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