An ellipsometric study of the oxidation of thin copper films in oxygen

被引：8
|
作者：
Khoviv, AM [1 ]
Nazarenko, IN [1 ]
Churikov, AA [1 ]
机构：
[1] Voronezh State Univ, Voronezh 394893, Russia
来源：
INORGANIC MATERIALS | 2001年 / 37卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
Oxidation; Oxygen; Copper; Silicon; Activation Energy;
D O I：
10.1023/A:1017524700274
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thermal oxidation of thin copper films deposited on single-crystal silicon was studied by ellipsometry. The optical properties of the oxide layers grown at 420-470 K over a period of up to 150 min were found to vary with layer thickness in a complex manner. The results were analyzed in terms of single- and two-layer models. The oxidation kinetics were shown to follow a parabolic rate law The apparent activation energies for different stages of oxidation were evaluated with allowance for the self-organization of the interfacial layer.
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页码：473 / 475
页数：3
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