Thermoelastic damping in trench-refilled polysilicon resonators

被引:0
|
作者
Abdolvand, R [1 ]
Ho, GK [1 ]
Erbil, A [1 ]
Ayazi, F [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents quality factor measurement results for trench-refilled (TR) polysilicon beam resonators which demonstrate an increase in Q as their resonant frequency increases, a trend opposite to what is expected from solid beams of the same dimensions. This phenomenon is believed to be due to a multi-path thermoelastic damping characteristic.. The frequency-dependant behavior of Q(TED) in trench-refilled resonators with voids is analyzed, for which the measurement data is agreeable. A multiphysics FEMLAB simulation was also performed to illustrate the thermal gradients in a resonating TR beam. We show that in a particular frequency range, trench-refilled polysilicon beams can have a higher Q than their silicon counterpart and the thickness of the resonator can be tuned to produce a desired quality factor behavior.
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页码:324 / 327
页数:4
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