Coplanar Donor-Acceptor Semiconducting Copolymers to Achieve Better Conjugated Structures: Side-Chain Engineering

被引:5
|
作者
Pei, Mingyuan [1 ]
Kim, Ji-Hoon [2 ]
On, Sungmin [1 ]
Lee, Han-Koo [3 ]
Cho, Kilwon [4 ]
Hwang, Do-Hoon [2 ]
Yang, Hoichang [1 ]
机构
[1] Inha Univ, Dept Appl Organ Mat Engn, Incheon 22212, South Korea
[2] Pusan Natl Univ, Dept Chem, Chem Inst Funct Mat, Busan 46241, South Korea
[3] Pohang Accelerator Lab, Pohang 37673, South Korea
[4] POSTECH, Dept Chem Engn, Pohang 37673, South Korea
基金
新加坡国家研究基金会;
关键词
alkyl spacer; benzodithiophene; diketopyrrolopyrrole; organic field effect transistor; side chain engineering; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; CARRIER MOBILITY; POLYMER; PERFORMANCE; ENHANCEMENT; ORIENTATION; IMPACT; CELLS;
D O I
10.1002/macp.201700135
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
It is reported on the allocation effects of branched alkyl chains, when used as solubility and ordering enhancers of the conjugated donor-accepter (D-A) copolymer backbones, on the ordering and pi-pi overlapping of the copolymers, that drastically affect the electrical properties of organic field-effect transistors (OFETs). Triisopropylsilylethynyl-benzo[1,2-b: 4,5-b'] dithiophene (TIPSBDT) and diketopyrrolopyrrole (DPP)-based copolymers, which have two linear alkyl spacers (methylene (C1) or butylene (C4)) between the DPP and side-substituent (C10H21) CH(C8H17)(-), are synthesized by Suzuki cross-coupling. These copolymer films are spun cast onto a polymer-treated SiO2 dielectric surface, and some are further thermally annealed. The longer spacer, C4, is found to efficiently enhance the coplanarity and conjugation of the D-A backbone, while the C1 does not. The resulting C4-bridged TIPSBDT-DPP-based copolymer readily develops a superior pi-extended layer on the dielectric surface; the edge-on chains with randomly oriented side chains can be closely packed with a short p-planar distance (d((010))) of 3.57 angstrom. Its properties are superior to those of the short spacer C1 system with d((010)) approximate to 3.93 angstrom. The C4-bridged TIPSBDT-DPP copolymer films yield a field-effect mobility up to 1.2 cm(2) V-1 s(-1) in OFETs, 12 times as higher than that of the C1 spacer system.
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页数:11
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