Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo

被引：5
|
作者：
Yamakawa, S [1 ]
Goodnick, SM
Branlard, J
Saraniti, M
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USA
来源：
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期
关键词：
D O I：
10.1002/pssc.200461525
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A full-band electron transport calculation in wurtzite phase GaN based on a detailed model of the electron-phonon interactions using a Cellular Monte Carlo (CMC) approach is applied to the frequency analysis of MESFETs. Realistic polar-optical phonon, impurity, piezoelectric and dislocation scattering is included in the full-band CMC simulator, which shows good agreement with measured velocity-field data. The effect of the dislocation scattering on the MESFET RF characteristics is examined as well, indicating that the computed cut-off frequency is affected by the crystal dislocation density and bias conditions. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2573 / 2576
页数：4
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