Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo

A full-band electron transport calculation in wurtzite phase GaN based on a detailed model of the electron-phonon interactions using a Cellular Monte Carlo (CMC) approach is applied to the frequency analysis of MESFETs. Realistic polar-optical phonon, impurity, piezoelectric and dislocation scattering is included in the full-band CMC simulator, which shows good agreement with measured velocity-field data. The effect of the dislocation scattering on the MESFET RF characteristics is examined as well, indicating that the computed cut-off frequency is affected by the crystal dislocation density and bias conditions. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim