Growth of Ultrahigh Density Vertically Aligned Carbon Nanotube Forests for Interconnects

被引:127
|
作者
Esconjauregui, Santiago [1 ]
Fouquet, Martin [1 ]
Bayer, Bernhard C. [1 ]
Ducati, Caterina [2 ]
Smajda, Rita [3 ]
Hofmann, Stephan [1 ]
Robertson, John [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England
[3] Ecole Polytech Fed Lausanne, Lab Complex Mater Phys, CH-1015 Lausanne, Switzerland
关键词
carbon nanotubes; growth mechanism; chemical vapor deposition; catalyst design; high density forests; interconnects; CHEMICAL-VAPOR-DEPOSITION; CATALYST-SUPPORT; WATER; ELECTRODES; FIBERS;
D O I
10.1021/nn1025675
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present a general catalyst design to synthesize ultrahigh density, aligned forests of carbon nanotubes by cyclic deposition and annealing of catalyst thin films. This leads to nanotube forests with an area density of at least 10(13) cm(-2), over 1 order of magnitude higher than existing values, and close to the limit of a fully dense forest. The technique consists of cycles of ultrathin metal film deposition, annealing, and immobilization. These ultradense forests are needed to use carbon nanotubes as vias and interconnects in integrated circuits and thermal interface materials. Further density increase to 10(14) cm(-2) by reducing nanotube diameter is possible, and it is also applicable to nanowires.
引用
收藏
页码:7431 / 7436
页数:6
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