InGaAsP lasers on GaAs fabricated by the surface activated wafer direct bonding method at room temperature

1.3 mu m InGaAsP/lnP strained-layer quantum wells ridge waveguide lasers have been successfully fabricated on a GaAs substrate by the surface activated wafer direct bonding method at room temperature. In this method, the surfaces of two wafers are activated by Ar fast atom beam irradiation and mated in a high vacuum. A high bonding strength was attained. No microcracks and voids were found under transmission electron microscopy(TEM). A threshold current density of 500 A/cm(2) was achieved. This technique is very promising to realize a monolithic of optoelectronic integrated circuits for optical communications and interconnections.