Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates

被引：4
|
作者：
Yang, C. C. [1 ,2 ]
Sheu, J. K. [1 ,2 ]
Kuo, C. H. [3 ]
Huang, M. S. [1 ,2 ]
Tu, S. J. [1 ,2 ]
Huang, F. W. [1 ,2 ]
Lee, M. L. [4 ]
Yeh, Yu-Hsiang [4 ]
Liang, X. W. [1 ,2 ]
Lai, W. C. [1 ,2 ]
机构：
[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[3] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Tainan 71150, Taiwan
[4] So Taiwan Univ, Dept Electroopt Engn, Tainan 71005, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 04期
关键词：
InGaN; patterned sapphire substrate (PSS); photovoltaic (PV); LIGHT-EMITTING-DIODES; FUNDAMENTAL-BAND GAP; MULTIQUANTUM-WELL; LASER-DIODES; EMISSION; INN;
D O I：
10.1109/LED.2011.2107725
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The InGaN/sapphire-based photovoltaic (PV) cells with Al(0.14)Ga(0.86)N/In(0.21)Ga(0.79)N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the short-circuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm(2), 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.
引用
收藏
页码：536 / 538
页数：3
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