Experimental study on a high power microwave amplifier driven by low rf power

被引:3
|
作者
Wu Yang [1 ,2 ]
Xu Zhou [2 ]
Xu Yong [2 ]
Jin Xiao [2 ]
Chang An-Bi [2 ]
Li Zheng-Hong [2 ]
Huang Hua [2 ]
Liu Zhong [2 ]
Luo Xiong [2 ]
Ma Qiao-Sheng [2 ]
Tang Chuan-Xiang [1 ]
机构
[1] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China
[2] CAEP, Inst Appl Elect, Mianyang 621900, Peoples R China
基金
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词
high power microwave; microwave device; high gain; mode control;
D O I
10.7498/aps.60.044102
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In order to suppress high order mode self-oscillation in a high gain amplifier, some special procedures, such as decreasing the coupling between beam and rf field in the forepart of the amplifier, are taken such that the tube works in a fully amplified state in an operation range. In simulation, the rf output power is 1. 7 GW with a beam of 7. 5 kA at 750 kV when input power is 6. 8 kW and the corresponding gain is 53. 9dB. Based on the results from 2D PIC simulation, the experiment is performed on the Sinus accelerator. In experiment, the amplifier is driven by a beam of 8 kA at 800 kV, and the maximum output power is 2. 04 GW when input power is 62 kW; the maximum gain reaches 46. 7dB when the input reduces to 39 kW, the corresponding output power is about 1. 84 GW. Both the simulation and the experiment prove that a kW-level rf power can drive the tube to generate a GW-level output power.
引用
收藏
页数:6
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