Modeling of Integrated RF Passive Devices

被引:0
|
作者
Kapur, Sharad [1 ]
Long, David E. [1 ]
机构
[1] Integrand Software Inc, Berkeley Hts, NJ 07922 USA
关键词
IMPEDANCE EXTRACTION; CAPACITANCE; PROGRAM;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe the use of an electromagnetic (EM) simulator for modeling integrated RF components and circuits. Modern EM simulators are fast and accurate enough to provide good models of such components. An important aspect of advanced IC processes is that the physical properties of wires (width, thickness, and resistance) vary depending on the surrounding wiring. We discuss how the EMX simulator [1] handles width- and spacing-dependent properties in the process description. Because the simulator handles mask-ready layout without the need for manual simplification, it is feasible to simulate thousands of possible designs and build scalable component models. Such scalable models allow fast choices of optimal components that meet user-supplied specifications.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] Design and Modeling of Planar Transformer-Based Integrated Passive Devices for Wireless Applications
    Huang, C. -H.
    Wei, T. -C.
    Horng, T. -S.
    Wu, S. -M.
    Li, J. -Y.
    Chen, C. -C.
    Wang, C. -C.
    Chiu, C. -T
    Hung, C. -P.
    2009 IEEE 59TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, VOLS 1-4, 2009, : 516 - +
  • [32] Passive Devices Fabrication on FOWLP and Characterization for RF Applications
    Wang Chunmei
    Jien, Chui King
    Wang Xiangyu
    Guan, Lim Teck
    Yu Mingbin
    See, Gilbert
    Yu, Gu
    2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017), 2017, : 312 - 318
  • [33] Rational Approximation of RF Passive Devices for Noisy Data
    Vrinda, K.
    Murty, N. S.
    Kurup, D. G.
    PROCEEDINGS OF THE 2018 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION AND SIGNAL PROCESSING (ICCSP), 2018, : 170 - 174
  • [34] Recent Advances of the Multipactor RF Breakdown in RF Satellite Microwave Passive Devices
    Gonzalez-Iglesias, D.
    Perez, A. M.
    Monerris, O.
    Anza, S.
    Vague, J.
    Gimeno, B.
    Boria, V. E.
    Gomez, A.
    Vegas, A.
    Diaz, E.
    Raboso, D.
    Coves, A.
    2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS), 2016, : 4401 - 4405
  • [35] NUMERICAL MODELING OF PASSIVE MICROWAVE DEVICES
    SILVESTER, P
    CSENDES, ZJ
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, TT22 (03) : 190 - 201
  • [36] RF CMOS is more than CMOS: Modeling of RF Passive Components
    Yu, Zhiping
    McAndrew, Colin C.
    PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2009, : 407 - +
  • [37] SOI-CMOS technology with monolithically integrated active and passive RF devices on high resistivity SIMOX substrates
    Hurrich, A
    Hubler, P
    Eggert, D
    Kuck, H
    Barthel, W
    Budde, W
    Raab, M
    1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 130 - 131
  • [38] High performance RF integrated passive devices on thick oxide substrate using Cu-BcB process
    Jeong, I
    Kim, KJ
    Kong, TO
    Kim, JS
    Choi, HK
    Nam, CM
    Kim, DW
    Kwon, YS
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2003, 37 (01) : 49 - 52
  • [39] Integrated passive devices (IPD) integration with eWLB (Embedded Wafer Level BGA) for high performance RF applications
    Prashant, Meenakshi
    Liu, Kai
    Yoon, Seung Wook
    2010 12TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2010, : 677 - 680
  • [40] A Passive Quadrature Generation Scheme for Integrated RF Systems
    Park, Jong Seok
    Wang, Hua
    2013 IEEE INTERNATIONAL WIRELESS SYMPOSIUM (IWS), 2013,