Effect of annealing temperature of a novel Sol-gel process on the electrical properties of low voltage ZnO-based ceramic films

被引：13
|
作者：
Jiang, SL [1 ]
Zhang, HB [1 ]
Huang, YQ [1 ]
Liu, MD [1 ]
Lin, RZ [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, MOE Engn Res Ctr Funct Ceram, Wuhan 430074, Hubei Province, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 117卷 / 03期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
Sol-gel process; annealing temperature; ZnO-based ceramic films; electrical properties of low voltage varistors;
D O I：
10.1016/j.mseb.2004.12.049
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of annealing temperature on the electrical properties of low voltage ZnO-based ceramic films was studied by a novel sol-gel process. The experiment results show that Zn7Sb2O12 and ZnCr2O4 phase can form in a lower annealing temperature (550 degrees C) by the solution doping, and the pyrochlore phase is not detected by X-ray diffractometer (XRD) from 550 degrees C to 950 degrees C. Sb2O3 phase can change to spinel phase completely; Bi2O3 and ZnO may be vaporized when the annealing temperature reaches 750 degrees C. The ZnO-based ceramic films with nonlinear coefficient of 20, nonlinear voltage of 5 V and the leakage current density of 0.5 mu A/mm(2) can be gained at the proper annealing temperature. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：317 / 320
页数：4
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