Germanium Gate Phototransistor fabricated on SOI Platform

被引：0
|
作者：
Sorianello, V. [1 ]
De Angelis, G. [2 ]
De Iacovo, A. [3 ]
Colace, L. [3 ]
Faralli, S. [2 ]
Romagnoli, M. [1 ]
机构：
[1] CNIT Lab Photon Networks, Via Moruzzi 1, I-56124 Pisa, Italy
[2] Scuola Super Sant Anna, TeCIP Inst, I-56124 Pisa, Italy
[3] Univ Rome Tre, Dept Engn, I-00146 Rome, Italy
来源：
2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2015年
关键词：
optically controlled transistor; phutodeteetors; phinotransisiurs; SILICON; LIGHT;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
,thstract We report on the fabrication and characterization of a novel near infrared phototransistor provided with a Germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.
引用
收藏
页码：19 / 20
页数：2
相关论文
共 50 条
  • [41] High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed
    Ge, Lei
    Li, Bin
    Li, Guo
    Wang, Xiwei
    Cheong, Kuan Yew
    Peng, Yan
    Han, Jisheng
    Li, Shuqiang
    Cui, Yingxin
    Zhong, Yu
    Cui, Peng
    Wang, Dufu
    Xu, Mingsheng
    Xu, Xiangang
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2023, 14 (02): : 592 - 597
  • [42] Gate tunable vertical geometry phototransistor based on infrared HgTe nanocrystals
    Greboval, Charlie
    Noumbe, Ulrich Nguetchuissi
    Chu, Audrey
    Prado, Yoann
    Khalili, Adrien
    Dabard, Corentin
    Tung Huu Dang
    Colis, Silviu
    Chaste, Julien
    Ouerghi, Abdelkarim
    Dayen, Jean-Francois
    Lhuillier, Emmanuel
    APPLIED PHYSICS LETTERS, 2020, 117 (25)
  • [43] Designer germanium quantum dot phototransistor for near infrared optical detection and amplification
    Kuo, M. H.
    Lai, W. T.
    Hsu, T. M.
    Chen, Y. C.
    Chang, C. W.
    Chang, W. H.
    Li, P. W.
    NANOTECHNOLOGY, 2015, 26 (05)
  • [44] Semi-Floating Gate Ferroelectric Phototransistor Optoelectronic Integrated Devices
    Shang, Jia-Le
    Chen, Ya
    Yan, Hao-Ran
    Di, Yun-Xiang
    Huang, Xin-Ning
    Lin, Tie
    Meng, Xiang-Jia
    Wang, Xu-Dong
    Chu, Jun-Hao
    Wang, Jian-Lu
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2025, 44 (01)
  • [45] Impact of Back-Gate Bias on DC and RF Characteristics in SiGe:C HBTs Fabricated on Thin-Film SOI
    Chen, Jing
    Yu, Tao
    Luo, Jiexin
    Wu, Qingqing
    Chai, Zhan
    Wang, Xi
    IEEE INTERNATIONAL SOI CONFERENCE, 2012,
  • [46] Simultaneous Interrogation of Multiple Fiber Bragg Grating Sensors Using an Arrayed Waveguide Grating Filter Fabricated in SOI Platform
    Trita, Andrea
    Voet, Eli
    Vermeiren, Jan
    Delbeke, Danae
    Dumon, Pieter
    Pathak, Shibnath
    Van Thourhout, Dries
    IEEE PHOTONICS JOURNAL, 2015, 7 (06):
  • [47] A gate-free MoS2 phototransistor assisted by ferroelectrics
    Shuaiqin Wu
    Guangjian Wu
    Xudong Wang
    Yan Chen
    Tie Lin
    Hong Shen
    Weida Hu
    Xiangjian Meng
    Jianlu Wang
    Junhao Chu
    Journal of Semiconductors, 2019, (09) : 59 - 64
  • [48] A SOI-based SiGe heterojunction phototransistor detector with enhanced light absorption capacity
    Ji, Ruilang
    Hongyun, Xie
    Liang, Chen
    Shen, Xiaoting
    Yang, Xiaoxiong
    Han, Dong
    Na, Weicong
    Jin, Dongyue
    Zhang, Wanrong
    SECOND INTERNATIONAL CONFERENCE ON OPTICS AND IMAGE PROCESSING (ICOIP 2022), 2022, 12328
  • [49] Comparative Study of Self-Heating Effects Influence on Triple-Gate FinFETs Fabricated on Bulk, SOI and Modified Substrates
    D'Angelo, Rodrigo
    Agopian, Paula G. D.
    2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013), 2013,
  • [50] Electrical model of a single pixel SOI phototransistor relying on the transient charge pumping technique
    Harik, Louis
    Kayal, Maher
    Sallese, Jean-Michel
    2007 IEEE SENSORS, VOLS 1-3, 2007, : 581 - 584
12345