Germanium Gate Phototransistor fabricated on SOI Platform

被引：0
|
作者：
Sorianello, V. [1 ]
De Angelis, G. [2 ]
De Iacovo, A. [3 ]
Colace, L. [3 ]
Faralli, S. [2 ]
Romagnoli, M. [1 ]
机构：
[1] CNIT Lab Photon Networks, Via Moruzzi 1, I-56124 Pisa, Italy
[2] Scuola Super Sant Anna, TeCIP Inst, I-56124 Pisa, Italy
[3] Univ Rome Tre, Dept Engn, I-00146 Rome, Italy
来源：
2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2015年
关键词：
optically controlled transistor; phutodeteetors; phinotransisiurs; SILICON; LIGHT;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
,thstract We report on the fabrication and characterization of a novel near infrared phototransistor provided with a Germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.
引用
收藏
页码：19 / 20
页数：2
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