The performance enhancement of an InGaN/GaN multiple-quantum-well solar cell by superlattice structure

被引：14

作者：

Shan, Hengsheng ^{[1
]}

Chen, Bin ^{[2
]}

Li, Xiaoya ^{[3
]}

Lin, Zhiyu ^{[1
]}

Xu, Shengrui ^{[1
]}

Hao, Yue ^{[1
]}

Zhang, Jincheng ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

[2] Xian Microelect Technol Inst, Dept Integrated Circuit Design, Xian 710065, Shaanxi, Peoples R China

[3] Northwest Univ, Sch Informat & Technol, Xian 710127, Shaanxi, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 11期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

GAN; LAYERS;

D O I：

10.7567/JJAP.56.110305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An enhanced InGaN/GaN multiple-quantum-well (MQW) solar cell was produced and characterized through the superlattice structure (SLS) insertion. The experiments demonstrated that the conversion efficiency of the fabricated device increased from 0.61 to 1.61%, compared to the device without SLS. The promising result was considered to originate from the SLS insertion. From Raman analysis and theoretical calculation of the electron transmissivity, it was demonstrated that the plane strain of GaN was effectively released when the SLS was inserted and the electron tunneling effect was enhanced. Consequently, the collection of photo-generated electrons was strengthened, which thereby led to the conversion efficiency increase. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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