Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films

被引：30
|
作者：
Zhang, GJ
Gu, DH
Gan, FX
Jiang, XW
Chen, QX
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Dens Opt Storage, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Photon Craft Project, Shanghai 201800, Peoples R China
来源：
THIN SOLID FILMS | 2005年 / 474卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
femtosecond laser; crystallization; amorphous materials; annealing;
D O I：
10.1016/j.tsf.2004.08.122
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of fermosecond laser with an average power of 65 mW at a frequency of 1000 Hz and a pulsed width of 120 fs. The surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：169 / 172
页数：4
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