High-performance thin-film transistors from solution-processed cadmium selenide and a self-assembled multilayer gate dieletric

被引：36
|
作者：
Byrne, Paul D. [1 ,2 ]
Facchetti, Antonio [1 ,2 ]
Marks, Tobin J. [1 ,2 ]
机构：
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
来源：
ADVANCED MATERIALS | 2008年 / 20卷 / 12期
关键词：
D O I：
10.1002/adma.200702677
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
TFTs based on solution-processed CdSe films as the semiconductor and a solution-processed nanoscopic self-assembled gate dielectric are fabricated. The devices exhibit high electron mobilities at low operating voltages.
引用
收藏
页码：2319 / +
页数：7
相关论文
共 50 条
  • [1] Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors
    Stallings, Katie
    Smith, Jeremy
    Chen, Yao
    Zeng, Li
    Wang, Binghao
    Di Carlo, Gabriele
    Bedzyk, Michael J.
    Facchetti, Antonio
    Marks, Tobin J.
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (13) : 15399 - 15408
  • [2] High-Performance Solution-Processed ZrInZnO Thin-Film Transistors
    Phan Trong Tue
    Miyasako, Takaaki
    Li, Jinwang
    Huynh Thi Cam Tu
    Inoue, Satoshi
    Tokumitsu, Eisuke
    Shimoda, Tatsuya
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 320 - 326
  • [3] Optimization of solution-processed amorphous cadmium gallium oxide for high-performance thin-film transistors
    Le, Minh Nhut
    Lee, Paul
    Kang, Seung-Han
    Ahn, Kyunghan
    Park, Sung Kyu
    Heo, Jaesang
    Kim, Myung-Gil
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2023, 11 (22) : 7433 - 7440
  • [4] High-performance solution-processed amorphous ZrInZnO thin-film transistors
    Chung, Ya-Wei
    Chen, Fang-Chung
    Chen, Ying-Ping
    Chen, Yu-Ze
    Chueh, Yu-Lun
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2012, 6 (9-10): : 400 - 402
  • [5] Aluminum Oxide/Fluoride Self-Assembled Monolayer Double Gate Dielectric for Solution-Processed Indium Oxide Thin-Film Transistors
    Wang, Xiao-Lin
    Shan, Fei
    Zhao, Han-Lin
    Lee, Jae-Yun
    Yoo, Suchang
    Ryu, Heung Gyoon
    Choi, Seungkeun
    Anvar, Tukhtaev
    Kim, Sung-Jin
    [J]. ELECTRONIC MATERIALS LETTERS, 2022, 18 (05) : 423 - 430
  • [6] Aluminum Oxide/Fluoride Self-Assembled Monolayer Double Gate Dielectric for Solution-Processed Indium Oxide Thin-Film Transistors
    Xiao-Lin Wang
    Fei Shan
    Han-Lin Zhao
    Jae-Yun Lee
    Suchang Yoo
    Heung Gyoon Ryu
    Seungkeun Choi
    Tukhtaev Anvar
    Sung-Jin Kim
    [J]. Electronic Materials Letters, 2022, 18 : 423 - 430
  • [7] High-performance thin-film transistors from solution-processed dithienothiophene polymer semiconductor nanoparticles
    Li, Jun
    Qin, Fang
    Li, Chang Ming
    Bao, Qiaoliang
    Chan-Park, Mary B.
    Zhang, Wei
    Qin, Jingui
    Ong, Beng S.
    [J]. CHEMISTRY OF MATERIALS, 2008, 20 (06) : 2057 - 2059
  • [8] Study of the improvements in the electrical performance of solution-processed metal oxide thin-film transistors using self-assembled monolayers
    Park, Jin-Woo
    Kim, Hyungjoong
    Kim, Dae Hwan
    Lee, Mijung
    [J]. ORGANIC FIELD-EFFECT TRANSISTORS XIII; AND ORGANIC SEMICONDUCTORS IN SENSORS AND BIOELECTRONICS VII, 2014, 9185
  • [9] Enabling gate dielectric design for all solution-processed, high-performance, flexible organic thin-film transistors
    Liu, Ping
    Wu, Yiliang
    Li, Yuning
    Ong, Beng S.
    Zhu, Shiping
    [J]. Journal of the American Chemical Society, 2006, 128 (14): : 4554 - 4555
  • [10] Enabling gate dielectric design for all solution-processed, high-performance, flexible organic thin-film transistors
    Liu, P
    Wu, YL
    Li, YN
    Ong, BS
    Zhu, SP
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (14) : 4554 - 4555
12345