Proton implantation effects on electrical and luminescent properties of p-GaN

被引：34
|
作者：
Polyakov, AY
Smirnov, NB
Govorkov, AV
Pearton, SJ
Zavada, JM
机构：
[1] Inst Rare Met, Moscow 119017, Russia
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] USA, Res Off, Res Triangle Pk, NC 27709 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 05期
关键词：
D O I：
10.1063/1.1600828
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties, deep level spectra, and microcathodoluminescence (MCL) spectra of p-GaN films implanted with 100 keV protons are reported. Measurable decreases of the MCL intensity began for doses as low as 10(12) cm(-2), while measurable decreases of the hole concentration started for doses of 10(13) cm(-2). The main deep traps introduced by protons had activation energies of 0.3, 0.6, and 0.9 eV. The 0.3 and 0.9 eV traps are located in the lower half of the band gap and determine the temperature dependence of the forward current in heavily proton implanted Schottky diodes. (C) 2003 American Institute of Physics.
引用
收藏
页码：3069 / 3074
页数：6
相关论文
共 50 条
  • [41] The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT
    Niu, Di
    Wang, Quan
    Li, Wei
    Chen, Changxi
    Xu, Jiankai
    Jiang, Lijuan
    Feng, Chun
    Xiao, Hongling
    Wang, Qian
    Xu, Xiangang
    Wang, Xiaoliang
    MICROMACHINES, 2021, 12 (02) : 1 - 9
  • [42] The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment
    Dae-Woo Kim
    Jun Cheol Bae
    Woo Jin Kim
    Hong Koo Baik
    Jae-Min Myoung
    Sung-Man Lee
    Journal of Electronic Materials, 2001, 30 : 183 - 187
  • [43] The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment
    Kim, DW
    Bae, JC
    Kim, WJ
    Baik, HK
    Myoung, JM
    Lee, SM
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (03) : 183 - 187
  • [44] Electrical properties of Pd-based ohmic contact to p-GaN with an diffusion barrier
    Kim, WJ
    Kim, DW
    Bae, JC
    Myoung, JM
    Baik, HK
    Lee, SM
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 813 - 816
  • [45] Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN
    Yoon, Young Soo
    Kim, Han-Ki
    JOURNAL OF ELECTROCERAMICS, 2006, 17 (2-4) : 277 - 281
  • [46] Effect of annealing temperature on the electrical and structural properties of V/p-GaN Schottky structures
    Padma, R.
    Nagaraju, G.
    Reddy, V. Rajagopal
    Choi, Chel-Jong
    THIN SOLID FILMS, 2016, 598 : 236 - 242
  • [47] Electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes
    Nakano, Y
    Kachi, T
    Jimbo, T
    APPLIED PHYSICS LETTERS, 2003, 82 (15) : 2443 - 2445
  • [48] Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices
    Polyakov, A. Y.
    Smirnov, N. B.
    Govorkov, A. V.
    Shcherbatchev, K. D.
    Bublik, V. T.
    Voronova, M. I.
    Dabiran, Amir M.
    Osinsky, A. V.
    Pearton, S. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (01): : 69 - 73
  • [49] Effects on electrical and optical properties of InGaN/GaN MQWs light-emitting diodes using Ni/ITO transparent p-contacts on p-GaN
    Singh, Kuldip
    Chauhan, Ashok
    Mathew, Manish
    Punia, Rajesh
    Kundu, Rajender Singh
    JOURNAL OF OPTICS-INDIA, 2019, 48 (02): : 240 - 245
  • [50] Proton implantation effects on electrical and recombination properties of undoped ZnO
    Pearton, S.J. (spear@mse.ufi.edu), 1600, American Institute of Physics Inc. (94):
12345