Identification of the conduction-band photoemission in time-resolved two-photon photoemission spectroscopy of Si surfaces

被引:15
|
作者
Ichibayashi, T. [1 ]
Tanimura, K. [1 ]
机构
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源
PHYSICAL REVIEW B | 2007年 / 75卷 / 23期
关键词
D O I
10.1103/PhysRevB.75.235327
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study photoemissions from Si(111)-(7x7) and Si(001)-(2x1) surfaces by means of time-resolved two-photon photoemission spectroscopy. The peak from the conduction-band minimum (CBM) of bulk Si electronic states has been identified unambiguously in the photoemission spectra for both surfaces, together with peaks from their intrinsic surface states. The CBM photoemission is excited selectively by p-polarized probe light with photon energy of around 5 eV. In terms of the one-step model of photoemission, we conclude that the CBM photoemission results from the transition to evanescent final states induced by the surface photoelectric effect.
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页数:6
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