Study of recombination process of lead-free cesium titanium (IV) based single halide and mixed halide perovskite compounds absorbing layer

The present research work represents the study of the recombination process at different positions of a hetero junction solar cell. The study for recombination process at depletion region, quasi-neutral region, front (right) contact region and back (left) contact region for lead-free Cesium Titanium (IV) based single halide perovskites compounds viz Cs2TiBr6, Cs2TiI6, Cs2TiCl6, and Cs2TiF6 and mixed halide compounds such asCs(2)TiI(1)Br(5), Cs2TiI2Br4, Cs2TiI3Br3, Cs2TiI4Br2,and Cs(2)TiI(5)Br(1)was studied using SCAPS-1D device simulator. The cell architecture used for the study is FTO/TiO2/absorbing layer/CuSCN/Ag. Open circuit voltage (V-OC) is a key performance parameter to understand the recombination process at the front contact and back contact interfaces of a solar cell device. This research article enumerated the total recombination current density (J(Tot. Recom)), bulk recombination rate (J(Bulk)), Schckley-Read-Hall recombination rate or defect recombination rate (J(SRH)) for the solar cell device. (C) 2020 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conference on Innovations in Clean Energy Technologies.