Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE

被引：2

作者：

Sugiyama, M ^{[1
]}

Nosaka, T ^{[1
]}

Nakajima, K ^{[1
]}

Ahmet, P ^{[1
]}

Aoyama, T ^{[1
]}

Chikyow, T ^{[1
]}

Chichibu, SF ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303410

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Effects of low temperature (LT-) GaN insertion on the cubic (c-) GaN thin film growth by metalorganic vapor phase epitaxy were investigated. Approximately 8-10-nm-thick LT-GaN were found to be essential for the growth of the c-GaN overlayer to prevent the films from peeling off from GaAs substrates and from the hexagonal GaN inclusion. When the LT-GaN was thinner than 8 rim, good quality c-GaN was obtained although distinct voids were formed at the c-GaN/GaAs interface. From the cross-sectional transmission electron microscopy (TEM) observation, lateral growth over the voids was found. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2099 / 2102

页数：4

共 50 条

[31] Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates
Georgakilas, A
Androulidaki, M
Tsagraki, K
Amimer, K
Constantinidis, G
Pelekanos, NT
Calamiotou, M
Czigany, Z
Pecz, B
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 525 - 528
[32] Effects of in situ annealing on optical and structural properties of GaN epilayers grown by HVPE
Duan, Chenghong
Qiu, Kai
Li, Xinhua
Zhong, Fei
Yin, Zhijun
Han, Qifeng
Wang, Yuqi
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2008, 29 (03): : 410 - 413
[33] Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates
As, DJ
Frey, T
Schikora, D
Lischka, K
Cimalla, V
Pezoldt, J
Goldhahn, R
Kaiser, S
Gebhardt, W
APPLIED PHYSICS LETTERS, 2000, 76 (13) : 1686 - 1688
[34] Investigation of thickness dependence of hexagonal component in cubic GaN film grown on GaAs (001) by MOVPE
Taki, T
Koukitu, A
Seki, H
BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 113 - 116
[35] TEM investigation of anisotropic defect structure in cubic GaN/AlGaAs/GaAs(001) grown by MOVPE
Parinyataramas, Jamreonta
Sanorpim, Sakuntam
Thanachayanont, Chanchana
Onabe, Kentaro
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2255 - 2257
[36] Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates
Zheng, C. C.
Ning, J. Q.
Wu, Z. P.
Wang, J. F.
Zhao, D. G.
Xu, K.
Gao, J.
Xu, S. J.
RSC ADVANCES, 2014, 4 (98): : 55430 - 55434
[37] Growth of wurtzite GaN on (001)GaAs substrates at low temperature by atomic layer epitaxy
Huang, SC
Wang, HY
Hsu, CJ
Gong, JR
Chiang, CI
Tu, SL
Chang, H
JOURNAL OF MATERIALS SCIENCE LETTERS, 1998, 17 (15) : 1281 - 1285
[38] Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD
Zheng, XH
Feng, ZH
Wang, YT
Zheng, WL
Jia, QJ
Jiang, XM
Yang, H
Liang, JW
JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) : 124 - 128
[39] Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs(001)
Jayavel, P.
Nakamura, S.
Koyama, T.
Hayakawa, Y.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8, 2006, 3 (08): : 2685 - +
[40] Optical properties of cubic GaN grown on SiC Si substrates
Philippe, A
Bru-Chevallier, C
Vernay, M
Guillot, G
Hübner, J
Daudin, B
Feuillet, G
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 168 - 172

← 1 2 3 4 5 →