Nucleation enhancement of diamond by electric arcing

被引：0
|
作者：
Choi, K [3 ]
Hwang, NM
Kang, SJL
机构：
[1] Korea Adv Inst Sci & Technol, Ctr Interface Sci & Engn Mat, Taejon 305701, South Korea
[2] Korea Res Inst Stand & Sci, Taejon 305600, South Korea
[3] Seoul Natl Univ, Coll Engn, Ctr Microstruct Sci Mat, Seoul 151742, South Korea
来源：
DIAMOND AND RELATED MATERIALS | 1998年 / 7卷 / 11-12期
关键词：
diamond CVD; bias; arcing; nucleation mechanism;
D O I：
10.1016/S0925-9635(98)00193-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Enhancement of diamond nucleation by arcing on pre-existing diamond particles has been studied in the hot-filament CVD process. A positive bias of 400 volt was applied on a wire hanging over a grounded substrate. Electric arcing between the wire and the substrate occurred during heating the filament in the temperature range 900-2000 degrees C, and resulted in an enhancement of nucleation around the pre-existing diamonds. The nucleation behavior was different from that of the conventional bias-enhanced nucleation, but the maximum nucleation density was almost the same. Based on the observed microstructural features, the enhanced nucleation mechanism was proposed to be the fragmentation of diamond particles during arcing. (C) 1998 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码：1617 / 1622
页数：6
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