Study of Injection Locking Effect in Terahertz Resonant Tunneling Diode Oscillators

被引：0
|
作者：
Mai Van Ta [1 ]
Luong Duy Manh [2 ]
Nguyen Huy Hoang [1 ]
机构：
[1] Le Quy Don Tech Univ, Hanoi, Vietnam
[2] Osaka Univ, Osaka, Japan
来源：
PROCEEDINGS OF THE 2017 INTERNATIONAL CONFERENCE ON ADVANCED TECHNOLOGIES FOR COMMUNICATIONS (ATC) | 2017年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article the injection locking effect in terahertz (THz) resonant tunneling diode (RTD) oscillators is studied using a circuit simulation method. The simulation model is implemented in a popular simulator called Keysight ADS for ease of use and effective investigation. The locking phenomenon is successfully observed. Pulling range, locking range, locking conditions and influence of antenna resistance on locking range of the effect are carefully discussed. We found that locking range is wide, locking effect can be occurred at a relatively low injected power and injection locked RTD THz oscillator array is feasible.
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页码：31 / 34
页数：4
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