Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films

被引：6

作者：

Sergeeva, O. N. ^{[1
,2
]}

Solnyshkin, A. V. ^{[1
,2
]}

Kiselev, D. A. ^{[2
,3
]}

Il'ina, T. S. ^{[3
]}

Kukushkin, S. A. ^{[2
,4
]}

Sharofidinov, Sh. Sh. ^{[2
,5
]}

Kaptelov, E. Yu. ^{[2
,5
]}

Pronin, I. P. ^{[2
,5
]}

机构：

[1] Tver State Univ, Tver 170026, Russia

[2] Herzen State Pedag Univ Russia, St Petersburg 191186, Russia

[3] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia

[4] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia

[5] Ioffe Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2019年 / 61卷 / 12期

关键词：

silicon substrates with different orientation; vicinal surfaces; buffer silicon carbide layer; aluminum nitride thin layers; pyroelectric effect; piezoelectric effect; ALN THIN-FILMS; GALLIUM NITRIDE; PHASE EPITAXY; GAN; ULTRAVIOLET;

D O I：

10.1134/S1063783419120485

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Dielectric and polar properties of aluminum nitride (AlN) thin films epitaxially grown on differently oriented silicon substrates with the p-type conduction and a buffer silicon carbide (SiC) layer and on vicinal planes are investigated. The results of studies of the polar properties by two independent methods-the dynamic pyroelectric effect and the piezoresponse force microscopy-show that the SiC buffer layer application considerably improves polar properties of the aluminum nitride thin layer.

引用

页码：2386 / 2391

页数：6

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