645-GHz InP heterojunction bipolar transistor harmonic oscillator

被引：0
|
作者：
Yun, J. [1 ]
Kim, J. [2 ]
Yoon, D. [3 ]
Rieh, J. -S. [2 ]
机构：
[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[2] Korea Univ, Sch Elect Engn, Seoul 02841, South Korea
[3] Natl Chiao Tung Univ, Int Coll Semicond & Technol, Hsinchu 300, Taiwan
来源：
ELECTRONICS LETTERS | 2017年 / 53卷 / 22期
基金：
新加坡国家研究基金会;
关键词：
heterojunction bipolar transistors; harmonic oscillators; indium compounds; wide band gap semiconductors; III-V semiconductors; millimetre wave oscillators; heterojunction bipolar transistor harmonic oscillator; common-base cross-coupled topology; second harmonic signal; push-push operation; bias variation; terahertz imaging; signal source; frequency; 561; 5 GHz to 645; 1; GHz; power; 49; 3; mW; InP;
D O I：
10.1049/el.2017.2754
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
645-GHz signal generation with a harmonic oscillator based on a 250-nm InP heterojunction bipolar transistor technology is demonstrated. The oscillator is based on the common-base cross-coupled topology, generating a second harmonic signal through the push-push operation. The fabricated oscillator exhibits oscillation frequencies ranging from 561.5 to 645.1 GHz with bias variation. The measured peak output power is -17.4 dBm with a dc power dissipation of 49.3 mW (dc-to-RF efficiency of 0.04%). Additionally, terahertz imaging was successfully demonstrated with the developed oscillator employed as a signal source.
引用
收藏
页码：1475 / 1476
页数：2
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