Recent progress in third generation infrared detectors

被引：20

作者：

Rogalski, A. ^{[1
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland

来源：

JOURNAL OF MODERN OPTICS | 2010年 / 57卷 / 18期

关键词：

third generation infrared detectors; HgCdTe photodiodes; InAs; GaSb superlattice photodiodes; QWIPs; QDIPs; FOCAL-PLANE ARRAYS; QUANTUM DOTS; QWIP; HGCDTE; BAND; COLOR; TECHNOLOGY; WAVELENGTH; FABRICATION; SINGLE;

D O I：

10.1080/09500340.2010.486485

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, issues associated with the recent development third generation detectors are discussed. In this class of detectors HgCdTe photodiodes, type II superlattice photodiodes, quantum-well infrared photoconductors (QWIPs), and quantum dot IR photodetectors (QDIPs) are considered. The main challenges facing multicolor devices concern complicated device structures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger and pixel size gets smaller. Also discussion on the on-going detector technology efforts is presented.

引用

页码：1716 / 1730

页数：15

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