Electrical and Raman properties of p-type and n-type modified graphene by inorganic quantum dot and organic molecule modification

被引：13

作者：

Hou YanXue ^{[1
,2
]}

Geng XiuMei ^{[3
]}

Li YuanZuo ^{[1
,4
]}

Dong Bin ^{[1
,4
]}

Liu LiWei ^{[3
]}

Sun MengTao ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Yanshan Univ, Coll Sci, Qinhuangdao 066004, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

[4] Dalian Nationalities Univ, Sch Sci, Dalian 116600, Peoples R China

来源：

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2011年 / 54卷 / 03期

基金：

中国国家自然科学基金;

关键词：

p-type and n-type graphene; electrical property; Raman property; FILMS; OXIDE;

D O I：

10.1007/s11433-011-4253-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We obtained n-type and p-type modified graphene by mixing quantum dots and depositing electron-acceptor molecules on the surface of graphene, respectively. The electrical and optical properties of these two types of samples were measured. For n-type modified graphene, the electrons were transferred from quantum dots to graphene. The resistance of these quantum dots in modified n-type graphene is significantly smaller than that of pristine graphene. For p-type graphene, modified by electron-acceptor organic molecules of tetracyanoethylene (TCNE), electrons were transferred from graphene to TCNE molecules. The resistance of this molecular modified p-type graphene is about 10% larger than that of pristine graphene. The charge transfer effect on the optical properties of graphene was investigated with Raman spectra.

引用

页码：416 / 419

页数：4

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