Resistive switching effect of Ag/MoS2/FTO device

被引：34
|
作者：
Sun, Bai [1 ,2 ]
Zhao, Wenxi [1 ,2 ]
Liu, Yonghong [1 ]
Chen, Peng [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
[2] Southwest Univ, ICEAM, Chongqing 400715, Peoples R China
来源：
FUNCTIONAL MATERIALS LETTERS | 2015年 / 8卷 / 01期
关键词：
MoS2; resistive switching; hydrothermal synthesis; multifunctional materials; memory device; MEMORY; RESISTANCE; MONOLAYER;
D O I：
10.1142/S1793604715500101
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electric-pulse-driven resistance change of metal/oxides/metal structure, which is called resistive switching effect, is a fascinating phenomenon for the development of next generation non-volatile memory. In this work, an outstanding bipolar resistive switching behavior of Ag/MoS2/fluorine-doped tin oxide (FTO) device is demonstrated. The device can maintain superior reversible stability over 100 cycles with an OFF/ON-state resistance ratio of about 10(3) at room temperature.
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页数：4
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