Comparison of high voltage switches in automotive DC-DC converter

被引：0
|
作者：
Gorgerino, A. [1 ]
Guerra, A. [1 ]
Kinzer, D. [1 ]
Marcinkowski, J. [1 ]
机构：
[1] Int Rectifier, 222 Kansas St, El Segundo, CA USA
来源：
2007 POWER CONVERSION CONFERENCE - NAGOYA, VOLS 1-3 | 2007年
关键词：
full bridge converter; modeling; MOSFET; IGBT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comparison between trench IGBT, trench MOSFET and superjunction MOSFET is provided in the context of an automotive full bridge DC to DC converter. The converter is analyzed in both hard switching and phase shifted ZVS operation in 3 different voltage ranges (medium, high and extended ranges). After calculating the device loss models, the results are provided as trade-off curves function of normalized cost.
引用
收藏
页码：345 / +
页数：2
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