Effect of switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs

被引：14

作者：

van der Wel, AP ^{[1
]}

Klumperink, EAM ^{[1
]}

Nauta, B ^{[1
]}

机构：

[1] Univ Twente, Fac Elect Engn, IC Design Grp, NL-7500 AE Enschede, Netherlands

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 01期

关键词：

D O I：

10.1049/el:20010008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Switched bias noise measurements on relatively large (> 0.8 mum) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 mum n-channel MOSFETs the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices.

引用

页码：55 / 56

页数：2

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