Fe20Ni80/Fe50Mn50 film magnetoresistive medium

被引：19
|
作者：
Vas'kovskiy, V. O. [1 ]
Lepalovskij, V. N. [1 ]
Gor'kovenko, A. N. [1 ]
Kulesh, N. A. [1 ]
Savin, P. A. [1 ]
Svalov, A. V. [1 ]
Stepanova, E. A. [1 ]
Shchegoleva, N. N. [2 ]
Yuvchenko, A. A. [1 ]
机构：
[1] Yeltsin Ural Fed Univ, Ekaterinburg 620002, Russia
[2] Russian Acad Sci, Inst Met Phys, Ural Branch, Ekaterinburg 620043, Russia
来源：
TECHNICAL PHYSICS | 2015年 / 60卷 / 01期
关键词：
BIAS;
D O I：
10.1134/S1063784215010260
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of several physico-technological factors on the microstructure and the magnetic and magnetoresistive properties of film structures based on Fe20Ni80/Fe50Mn50 bilayers with exchange (magnetic) bias is investigated. The dependences of the magnetic bias, coercive force, and anisotropic magnetoresistance on the deposition sequence and thickness of layers in the structures, substrate temperature, annealing temperature, and measurement temperature are determined for films obtained by magnetron sputtering, including with a high-frequency electric bias applied to the substrate. It is shown that the film SiO2/Ta(5)/Fe20Ni80(5)/Fe50Mn50(20)/Fe20Ni80(40)/Ta(5) structure offers an optimal combination of properties as a magnetoresistive medium with internal magnetic bias. Testing data for magnetic sensors made of this material by optical lithography are presented.
引用
收藏
页码：116 / 122
页数：7
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