Comment on 'temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions'

被引：0
|
作者：
Pipinys, P. [1 ]
Rimeika, A. [1 ]
机构：
[1] Vilnius Pedag Univ, Dept Phys, LT-08106 Vilnius, Lithuania
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2008年 / 20卷 / 08期
关键词：
D O I：
10.1088/0953-8984/20/8/088003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Current-voltage characteristics of Sn/ PANI/ p-Si/ Al heterojunctions, measured in the temperature range 140-280 K by Kaya et al ( 2007 J. Phys.: Condens. Matter 19 406205), are reinterpreted in the framework of phonon-assisted tunnelling theory, as a free-charge-carrier generation mechanism in the strong electrical field. It is shown that phonon-assisted tunnelling more adequately describes the peculiarities of the variation of I-V data with temperature in PANI polymers.
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页数：3
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