An improved analysis for the bipolar linear transconductor

被引：0
|
作者：
Abuelma'atti, MT
AlDaghrier, HM
机构：
[1] King Fahd University of Petroleum and Minerals, Dhahran, 31261
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1996年 / 80卷 / 06期
关键词：
D O I：
10.1080/002072196137011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved analysis for the bipolar linear transconductor, assuming a finite value for the transistor current-gain beta, is presented. A new expression for the normalized input-voltage as a function of the normalized output-current is obtained. A Fourier-series model is presented for this current-voltage relationship. Closed-form expressions are also derived for the harmonic and intermodulation components resulting from exciting the bipolar linear transconductor by a multisinusoidal input voltage. These expressions can be used to predict the limiting values of the input voltage amplitudes for a prescribed tolerable distortion percentage.
引用
收藏
页码：739 / 745
页数：7
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