LINEAR TUNABLE COMFET TRANSCONDUCTOR

被引：15
|
作者：
HUANG, SC
ISMAIL, M
机构：
[1] Solid-State Microelectronics Laboratory, Department of Electrical Engineering, The Ohio State University, Columbus
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 05期
关键词：
INTEGRATED CIRCUITS; SIGNAL PROCESSING; ANALOG FILTERS; AMPLIFIERS; MULTIPLIERS;
D O I：
10.1049/el:19930307
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A linear tunable transconductor is designed with the use of linear COMposite n-channel MOSFETs (COMFETs) and CMOS COMposite FETs as basic cells. With crosscoupling, a differential linear relation is achieved with a THD at 1 kHz of 0.776% for a differential voltage of +/- 4V. The design of the transconductor demonstrates that COMFET devices can be successfully used as standard cells in modulator analogue VLSI circuits. The transconductor performance at subthreshold is also discussed.
引用
收藏
页码：459 / 461
页数：3
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