Melanin Layer on Silicon: an Attractive Structure for a Possible Exploitation in Bio-Polymer Based Metal-Insulator-Silicon Devices

被引：71

作者：

Ambrico, Marianna ^{[1
]}

Ambrico, Paolo F. ^{[1
]}

Cardone, Antonio ^{[2
]}

Ligonzo, Teresa ^{[3
]}

Cicco, Stefania R. ^{[2
]}

Di Mundo, Rosa ^{[4
]}

Augelli, Vincenzo ^{[3
]}

Farinola, Gianluca M. ^{[4
]}

机构：

[1] CNR Ist Metodol Inorgan & Plasmi UOS Bari, I-70125 Bari, Italy

[2] CNR Ist Chim Composti Organometall UOS Bari, I-70125 Bari, Italy

[3] Univ Bari Aldo Moro, Dipartimento Interateneo Fis, I-70125 Bari, Italy

[4] Univ Bari Aldo Moro, Dipartimento Chim, I-70125 Bari, Italy

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 29期

关键词：

MEMORY APPLICATIONS; CONJUGATED POLYMER; OXIDE;

D O I：

10.1002/adma.201101358

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Synthetic melanin based metal-insulator-semiconductor devices are fabricated for the first time thanks to silicon surface wettability modification by using dielectric barrier discharge plasma. Ambipolar charge trapping in air and ion drift mechanisms under vacuum are identified by capacitance-voltage hysteresis loops. These results aim to foresee the possible integration of synthetic melanin layers as a novel capacitor in organic polymer based devices.

引用

页码：3332 / +

页数：6

共 42 条

[41] Thin layer oxide in the drift region of Laterally double-diffused metal oxide semiconductor on silicon-on-insulator: A novel device structure enabling reliable high-temperature power transistors
Mehrad, Mahsa
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 30 : 599 - 604
[42] Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems
Jang, Won Douk
Yoon, Young Jun
Cho, Min Su
Jung, Jun Hyeok
Lee, Sang Ho
Jang, Jaewon
Bae, Jin-Hyuk
Kang, In Man
JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59

← 1 2 3 4 5 →