Chemical solution deposition and transport properties of epitaxial CuFeO2 thin films

被引：28
|
作者：
Zhang, Li [1 ]
Li, Ping [1 ]
Huang, Kai [1 ]
Tang, Zhen [1 ]
Liu, Guohong [1 ]
Li, Yibao [1 ]
机构：
[1] Anhui Univ Architecture, Dept Math & Phys, Hefei 230022, Peoples R China
来源：
MATERIALS LETTERS | 2011年 / 65卷 / 21-22期
关键词：
Electroceramics; Sol-gel preparation; Thin films; Epitaxial growth; ELECTRICAL-PROPERTIES; CAPACITY; OXIDES;
D O I：
10.1016/j.matlet.2011.07.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, chemical solution deposition is used to prepare CuFeO2 thin films on Al2O3 (001) substrates by nitrate-based precursors. The derived films are characterized by X-ray diffraction and field-emission scanning electron microscopy. The derived thin film is epitaxial growth. The lowest resistivity is 0.58 Omega cm at 300 K. which is comparable to the single crystals, indicating the chemical solution deposition is an effective route to obtain the CuFeO2 films. The high- and low-temperature transport mechanisms are attributed to thermal activation and Mott variable range hopping type, respectively. The result will provide a feasible route to prepare epitaxial CuFeO2 thin films using chemical solution deposition. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：3289 / 3291
页数：3
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