Low-temperature growth of GaN and InxGa1-xN films on glass substrates

被引：31

作者：

Sato, Y ^{[1
]}

Kurosaki, A ^{[1
]}

Sato, S ^{[1
]}

机构：

[1] Akita Univ, Coll Min, Dept Elect & Elect Engn, Akita 010, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaN; InGaN; thin film; glass substrate; RF plasma; electrical property;

D O I：

10.1016/S0022-0248(98)00153-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of GaN and some InxGa1-xN films on conventional glass substrates using RF plasma excitation is investigated. Highly c-axis oriented films are obtained at low growth temperatures, and the crystallinity depends on the growth rate as well as the growth temperature. The resistivity of the films can be adjusted by controlling the growth rate, the RF power and the In content. The use of thin GaN buffer layers decreases the resistivity of the GaN films considerably. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：42 / 46

页数：5

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