Photo-Induced Inverse Spin Hall Effect in Au/InP hybrid structure

被引:0
|
作者
Khamari, Shailesh K. [1 ]
Porwal, S. [1 ]
Sharma, T. K. [1 ]
Oak, S. M. [1 ]
机构
[1] Raja Ramanna Ctr Adv Technol, Semicond Laser Sect, Indore 452013, India
关键词
inverse spin Hall effect; spin relaxation; CONVERSION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photo-induced inverse spin Hall effect (ISHE) measurements on a Au/InP metal-semiconductor junction are performed. Spin polarized electrons, which are generated in InP by the circularly polarized laser light of 2.33 eV (532 nm), provide a net spin current in thin Au-layer after crossing the Schottky barrier. This generates a transverse electric current because of large spin orbit coupling in Au-layer. ISHE origin of the measured signal is confirmed by a linear variation of the spin current with the degree of circular polarization of incident light. Furthermore, angle dependence of spin current matches well with the predicted trends.
引用
收藏
页码:855 / 857
页数:3
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