共 50 条
- [44] Optical properties of GaN epitaxial layers grown by low-pressure metalorganic vapor phase epitaxy under various growth conditions [J]. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 109 - 112
- [49] P-type GaN directly grown by low pressure metalorganic vapor phase epitaxy [J]. CHINESE PHYSICS LETTERS, 1997, 14 (08): : 637 - 640