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Off-stoichiometry effects on BiFeO3 thin films
被引:81
|作者:
Lahmar, A.
[1
,2
]
Zhao, K.
[1
]
Habouti, S.
[1
]
Dietze, M.
[1
]
Solterbeck, C. -H.
[1
]
Es-Souni, M.
[1
]
机构:
[1] Univ Appl Sci, Inst Mat & Surface Technol, Kiel, Germany
[2] Univ La Rochelle, LEACIM, F-17042 La Rochelle 01, France
关键词:
Bismuth ferrite;
Phase diagram;
Defect structure;
Ferroelectric properties;
Magnetic properties;
FERROELECTRIC PROPERTIES;
NEUTRON-DIFFRACTION;
SYSTEM;
D O I:
10.1016/j.ssi.2011.03.017
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The effects of Bi and Fe-excess on the structure, ferroelectric, leakage current and magnetic properties of BiFeO3 (BFO) thin films are reported. BFO with 5% excess exhibits no change in the structure with an improvement in leakage current properties in comparison to stoichiometric BFO. Raman spectroscopy of 10% Bi excess suggests a structural change from monoclinic to rhombohedral accompanied with an improvement of resistivity and ferroelectric polarization switching. A higher Fe-excess leads to the formation of pyrochlore Bi2Fe4O9 and gamma-Fe2O3 that cause an increase in conductivity at the macroscopic scale. The results are discussed in terms of Fe and Bi-excess effects on the defect structure of BFO. (C) 2011 Elsevier B.V. All rights reserved.
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页码:1 / 5
页数:5
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